Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 35, Issue 6, 1988, Pages 1536-1540

  Schrimpf, R D ^a   Wahle, P J ^a   Andrews, R C ^b   Cooper, D B ^a   Galloway, K F ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; ELECTRONIC CIRCUITS, POWER SUPPLY;

INTERFACE TRAPS; IONIZING RADIATION; RADIATION HARDNESS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024176509     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.25493     Document Type: Article

References (9)

1. P.S. Winokur, F.W. Sexton, G.L. Hash, and D.C. Turpin, “Total-Dose Failure Mechanisms of Integrated Circuits in Laboratory and Space Environments,” IEEE Trans. Nucl. Sci., NS-34, pp. 1448–1454 (1987).
2. D.M. Fleetwood, P.S. Winokur, and J.R. Schwank, “Using Laboratory X-Ray and Cobalt-60 Irradiations to Predict CMOS Device Response in Strategic and Space Environments,” presented at the IEEE Nuclear and Space Radiation Effects Conference, Portland, OR (1988).
3. A.H. Johnson, “Super Recovery of Total Dose Damage in MOS Devices,” IEEE Trans. Nucl. Sci., NS-31, pp. 1427–1433 (1984).
4. B.J. Baliga, Modern Power Devices, New York: Wiley-Interscience, 1987, Ch. 6, pp. 270–272.
5. International Rectifier Preliminary Data Sheet No. PD-9.477A, IRH-254 N-Channel Rad Hard HEXFET, El Segundo, CA (1987).
6. F.B. McLean and T.R. Oldham, “Basic Mechanisms of Radiation Effects in Electronic Materials and Devices,” Harry Diamond Laboratories Report HDL-TR-2129, p. 44 (1987).
7. P.J. McWhorther and P.S. Winokur, “Simple Technique for Separating the Effects of Interface Traps and Trapped-Oxide Charge in Metal-Oxide-Semiconductor Transistors,” Appl. Phys. Lett., 48, pp. 133–135 (1986).
8. F.B. McLean, “A Framework for Understanding Radiation-Induced Interface States in SiO 2 MOS Structures,” IEEE Trans. Nucl. Sci., NS-27, pp. 1651–1657 (1980).
9. R.L. Pease, private communication.