Latent interface-trap generation in commercial power vdmosfets

IEEE Transactions on Nuclear Science

Volumn 45, Issue 3, 1998, Pages 1365-1371

  Jaksic A ^a   Pejovic, M ^a   Ristic, G ^a   Rakovic, S ^a  

^a Faculty of Electronic Engineering

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; DOSIMETRY; GATES (TRANSISTOR); HYDROGEN; INTERFACES (MATERIALS); IONS; IRRADIATION; MATHEMATICAL MODELS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; TEMPERATURE;

CRACKING REACTION; HYDROGEN IONS; INTERFACE TRAP DENSITY; INTERFACE TRAP GENERATION; MOLECULAR HYDROGEN;

RADIATION EFFECTS;

EID: 0032099661     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.685208     Document Type: Article

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