RADIATION-INDUCED INTERFACE TRAPS IN POWER MOSFETS.

IEEE Transactions on Nuclear Science

Volumn NS-33, Issue 6, 1986, Pages

  Singh, Gurbax ^a   Galloway, Kenneth F ^a   Russell, Thomas J ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - RADIATION EFFECTS;

POWER MOSFETS; RADIATION-INDUCED INTERFACE TRAPS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022883671     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (21)