Use of charge pumping for characterising interface traps during thermal annealing of irradiated power VDMOSFETs

Electronics Letters

Volumn 32, Issue 23, 1996, Pages 2183-2184

  Jaksic A ^a   Igic P ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

MOSFET; Power semiconductor devices

Indexed keywords

ANNEALING; ENERGY GAP; INTERFACES (MATERIALS); ION BOMBARDMENT; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

VERTICAL DOUBLE DIFFUSED MOSFET (VDMOSFET);

MOSFET DEVICES;

EID: 0030574147     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19961458     Document Type: Article

References (8)

1. GROESENEKEN, G., MAES, H.E., BELTRAN, N., and DE KEERSMAECKER, R.F.: 'A reliable approach to charge-pumping measurements in MOS transistors', IEEE Trans., 1984, ED-31, (1), pp. 42-53
2. 2 interface in power VDMOSFETs', Microelectron. Eng., 1995, 28, (1-4), pp. 171-174
3. PREVOST, G., AUGIER, P., and PALAU, J.M.: 'The use of charge-pumping for characterizing irradiated power VDMOSFETs', IEEE Trans. Nucl. Sci., 1996, 43, (3), pp. 858-864
4. MCWHORTER, P.J., and WINOKUR, P.S.: 'Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors', Appl. Phys. Lett., 1986, 48, (2), pp. 133-135
5. JAKŠIĆ, A., RISTIĆ, G., and PEJOVIĆ, M.: 'Rebound effect in power VDMOSFETs due to latent interface trap generation', Electron. Lett., 1995, 31, (14), pp. 1198-1199
6. ELLIOT, B.M.: 'The use of charge pumping currents to measure surface state densities in MOS transistors', Solid-State Electron., 1976, 19, (3), pp. 241-247
7. HEREMANS, P., WITTERS, J., GROESENEKEN, G., and MAES, H.E.: 'Analysis of the charge pumping technique and its application for the evaluation of MOSFET degradation', IEEE Trans. Electron. Devices, 1989, 36, (7), pp. 1318-1335
8. SCHWANK, J.R., FLEETWOOD, D.M., SHANEYFELT, M.R., and WINOKUR, P.S.: 'A critical comparison of charge-pumping, dual-transistor, and midgap measurement techniques', IEEE Trans. Nucl. Sci., 1993, 40, (6), pt. 1, pp. 1666-1677