Investigation of Possible Sources of 1/f Noise in Irradiated n-Channel Power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 1902-1906

  Ploor, M D ^a   Schrimpf, R D ^a   Galloway, K F ^a  

^a UNIVERSITY OF ARIZONA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTATIONAL METHODS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TUNNELING; INTERFACES (MATERIALS); MATHEMATICAL MODELS; RADIATION EFFECTS; SEMICONDUCTOR JUNCTIONS; SPURIOUS SIGNAL NOISE;

BIAS ANNEALING; POWER MOSFETS; TRAPPED CHARGE DENSITIES;

MOSFET DEVICES;

EID: 0028697025     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340524     Document Type: Article

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