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Volumn 81, Issue 5, 1997, Pages 2437-2441

Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000634541     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364251     Document Type: Article
Times cited : (30)

References (16)
  • 10
    • 0003551261 scopus 로고
    • International series on the science of the solid state Pergamon, New York
    • R. Chen and Y. Kirsh, Analysis of Thermally Stimulated Process, International series on the science of the solid state (Pergamon, New York, 1981), Vol. 15.
    • (1981) Analysis of Thermally Stimulated Process , vol.15
    • Chen, R.1    Kirsh, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.