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Volumn 81, Issue 5, 1997, Pages 2437-2441
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Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0000634541
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.364251 Document Type: Article |
Times cited : (30)
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References (16)
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