The determination of si-sio2 interface trap density in irradiated four-terminal vdmosfets using charge pumping

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 2558-2564

  Witczak, S C ^a   Galloway, K F ^a   Schrimpf, R D ^a   Titus, J L ^b   Brews, J R ^b   Prevost G ^b  

^a University of Arizona   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; SILICA;

CHARGE PUMPING; INTERFACE TRAP DENSITY; VERTICAL DOUBLE DIFFUSED MOSFETS;

MOSFET DEVICES;

EID: 0030349553     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556836     Document Type: Article

References (23)

1. G. Groeseneken, H. E. Maes, N. Beitran and R. F. DeKeersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Trans. Electr. Dev. , vol. 31, pp. 42-53, 1984.
2. G. V. den bosch, G. V. Groeseneken, P. Heremans and H. E. Maes, "Spectroscopic charge pumping: a new procedure for measuring interface trap distributions on MOS transistors," IEEE Trans. Electr. Dev. , vol. 38, pp. 1820-1831, 1991.
3. M. Kejhar, "Double-pulse charge pumping in MOSFET's," Electr. Dev. Lett. , vol. 13, pp. 344-346, 1992.
4. N. S. Saks, M. G. Ancona and W. Chen, "Evaluation of the 3-level charge pumping technique for characterizing inter-
5. face traps," Appl. Phys. Lett. , vol. 60, pp. 2261-2263, 1992. [5] W. L. Tseng, "A new charge pumping method of measuring Si-SiO2 interface states," J. Appl. Phys. , vol. 62, pp. 591599, 1987.
6. H. Haddara and S. Christoloveanu, "Profiling of stress induced interface states in short channel MOSFETs using a composite charge pumping technique," Solid-St. Electr. , vol. 29, pp. 767-772, 1986.
7. F. Hofmann and W. H. Krautschneider, "A simple technique for determining the interface-trap distribution of submicron metal-oxide-semiconductor transistors by the charge pumping method," J. Appl. Phys. , vol. 65, pp. 1358-1360, 1989.
8. J. E. Chung and R. S. Müller, "The development and application of a Si-SiOj interface-trap measurement system based on the staircase charge-pumping technique," SolidSt. Electi. , vol. 32, pp. 867-882, 1989.
9. X. M. Li and M. J. Deen, "A new charge pumping method for determining the spatial interface state density distribution in MOSFETs," IEDM Tech. Dig. , pp. 85-87, 1990.
10. J. -J. Shaw and K. Wu, "Determination of spatial distribution of interface states on submicron, lightly doped drain transistors by charge pumping measurement," IEDM Tech. Dig. , pp. 83-87, 1989.
11. J. L. Dimauro and A. K. Henning, "Lateral distribution of interface states in pMOSFET's," IEDM Tech. Dig. , pp. SI84, 1990.
12. R. E. Pauken, R. R. Siergiej, M. L. French and M. H. White, "Observation of near-interface oxide traps with the charge pumping technique," Electi. Dev. Lett. , vol. 13, pp. 627629, 1992.
13. N. S. Saks and M. G. Ancona, "Determination of interface trap capture cross sections using three-level charge pumping," Electi. Dev. Lett. , vol. 11, pp. 339-341, 1990.
14. P. J. McWhorter and P. S. Winokur, "Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors," AppL Phys. Lett. , vol. 48, pp. 133-135, 1985.
15. S. R. Anderson, D. Zupac, R. D. Schrimpf and K. F. Galloway, "The surface generation hump in irradiated power MOSFETs," IEEE Trans. Nucl. Sei. , vol. 41, pp. 24432451, 1994.
16. P. M. Igic, "Determination of surface states trap density in power VDMOSFETs using charge pumping technique," Proc. 20th Int. Conf. Microelecti. , vol. 1, pp. 255-258, 1995.
17. P. Habas, Z. Prijic and D. Pantic, "The application of chargepumping technique to characterize the Si/SiOs interface in power VDMOSFETs," Microelectr. Eng. , vol. 28, pp. 171174, 1995.
18. G. Prévost, P. Augier and J. -M. Palau, "The use of chargepumping for characterizing irradiated power MOSFETs," RADECS Proc. , pp. 230-236, 1995.
19. D. A. Grant and J. Gowar, Power MOSFETs theory and applications, pp. 34-44, 84-85, John Wiley and Sons, New York, 1989.
20. R. F. Pierret, Field effect devices, pp. 120-122, AddisonWesley, New York, 1990.
21. R. S. Muller and T. I. Kamins, Device electronics for integrated circuits, pp. 435-439, John Wiley and Sons, New York, 1986.
22. G. W. Neudeck, The pn junction diode, pp. 35-39, AddisonWesley, New York, 1989.
23. D. Zupac, S. R. Anderson, R. D. Schrimpf and K. F. Galloway, "Determining the drain doping in DMOS transistors using the hump in the leakage current," IEEE Trans. Electi. Dev. , vol. 41, pp. 2326-2336, 1994.