The use of charge-pumping for characterizing irradiated power mosfets

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 1, 1996, Pages 858-864

  Prevost, Gwenac̈l ^a   Augier, Pascal ^a   Palau, Jean Marie ^a  

^a THALES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; INTERFACES (MATERIALS); RADIATION EFFECTS;

CHARGE PUMPING; RADIATION INDUCED INTERFACE TRAPS;

MOSFET DEVICES;

EID: 0030171990     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.510725     Document Type: Article

References (12)

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10. J-M Moragues, "Caracterisation des defauts dans les dispositifs a technologie MOS : defauts crees par injection Fowler-Nordheim", Thesis, Universite Montpellier II, 1994.
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