Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 2001-2006

  Saigne F ^a   Dusseau, L ^b   Fesquet, J ^c   Gasiot, J ^d   Ecoffet, R ^a   David, I P ^b   Schrimpf, R D ^c   Galloway, K F ^d  

^a UNIV MONTPELLIER   (France)

^b CNES   (France)

^c ONERA   (France)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; RADIATION EFFECTS; SEMICONDUCTOR DEVICE TESTING; SPACE APPLICATIONS; THERMAL EFFECTS;

RADIATION INDUCED CHARGE TRAPPING; THERMAL DETRAPPING;

MOS DEVICES;

EID: 0031367154     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.658981     Document Type: Article

References (12)

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