Modelling of kinetics of creation and passivation of interface traps in metal-oxide-semiconductor transistors during postirradiation annealing

Journal of Applied Physics

Volumn 83, Issue 6, 1998, Pages 2994-3000

  Ristić, Goran S ^a   Pejović, Momčilo ^a   Jakšić, Aleksandar B ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACES (MATERIALS); MOSFET DEVICES; NUMERICAL ANALYSIS; PASSIVATION; REACTION KINETICS;

BIMOLECULAR THEORY; GATE BIAS; INTERFACE TRAPS; POSTIRRADIATION ANNEALING;

MATHEMATICAL MODELS;

EID: 0032027260     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367055     Document Type: Article

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