Charge trapping in nitrogen implanted 6H-SiC N+P junctions

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 161-164

  Ramungul, N ^a   Chow, T P ^a   Brown, D M ^a   Michon, G ^a   Downey, E ^a   Kretchmer, J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TRANSPORT PROPERTIES; ION IMPLANTATION; LEAKAGE CURRENTS; NITROGEN; SEMICONDUCTOR DOPING; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS;

CHARGE TRAPPING;

SEMICONDUCTOR JUNCTIONS;

EID: 0030658658     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)