Comparison of the annealing behavior of high-dose nitrogen-, aluminum-, and boron-implanted 4H-SiC

Applied Physics Letters

Volumn 72, Issue 16, 1998, Pages 2026-2028

  Seshadri, S ^a   Eldridge, G W ^a   Agarwal, A K ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544453299     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121681     Document Type: Article

References (23)

1. M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices 40, 645 (1993).
2. R. J. Trew, J.-B. Yan, and P. M. Mock, Proc. IEEE 79, 598 (1991).
3. Gmelin Handbook of Inorganic Chemistry, Si Supplement, edited by G. Kirschstein (Springer, New York, 1984), Vol. B2, p. 113.
4. G. Pensl and W. J. Choyke, Physica B 185, 264 (1993).
5. G. Pensl, V. V. Afanas'ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H. P. Strunk, M. Maier, and W. J. Choyke, Inst. Phys. Conf. Ser. 142, 275 (1996).
6. J. A. Spitznagel, S. Wood, W. J. Choyke, N. J. Doyle, J. Bradshaw, and S. G. Fishman, Nucl. Instrum. Methods Phys. Res. B 16, 237 (1986).
7. J. Crofton, P. A. Barnes, J. R. Williams, and J. A. Edmond, Appl. Phys. Lett. 62, 384 (1993).
8. H. G. Bohn, J. M. Williams, C. J. McHargue, and G. M. Begun, J. Mater. Res. 2, 107 (1987).
9. J. M. Williams, C. J. McHargue, and B. R. Appleton, Nucl. Instrum. Methods Phys. Res. 209-210, 317 (1983).
10. G. Pensl, R. Helbig, H. Zhang, G. Ziegler, and P. Lanig, Mater. Res. Soc. Symp. Proc. 97, 537 (1987).
11. M. Ghezzo, D. M. Brown, E. Downey, J. Kretchmer, and J. J. Kopanski, Appl. Phys. Lett. 63, 1206 (1993).
12. P. M. Shenoy and B. J. Baliga, IEEE Electron Device Lett. 16, 10 (1995).
13. Ion implants were performed by Implant Sciences, Inc., 107 Audubon Road, 5 Corporate Pl., Wakefield, MA01880.
14. Lehighton Electronics Inc., P.O. Box 328, Lehighton, PA18235.
15. SIMS and RBS measurements were performed by Charles Evans & Assoc., 301 Chesapeake Dr., Redwood City, CA94063.
16. T. Kimoto, N. Inoue, and H. Matsunami, Phys. Status Solidi A 162, 263 (1997).
17. W. J. Schaffer, G. H. Negley, K. G. Irvine, and J. W. Palmour, Mater. Res. Soc. Symp. Proc. 339, 595 (1994).
18. S. Seshadri, L. J. Guido, and P. Mitev, Appl. Phys. Lett. 67, 497 (1995).
19. L. A. Christel and J. F. Gibbons, J. Appl. Phys. 52, 5050 (1981).
20. R. F. Davis, Adv. Ceram. Nonstoichiometric Compounds 23, 477 (1987).
21. C. Wang, J. Bernholc, and R. F. Davis, Phys. Rev. B 38, 12752 (1988).
22. H. Itoh, T. Troffer, and G. Pensl, Proceedings of the International Conference on SiC III-Nitrides and Related Materials 1997 (ICSCIII-N '97), Stockholm, Sweden, Aug. 31-Sept 5, 1997, ThP-32.
23. T. Troffer, C. Peppermuller, and G. Pensl, J. Appl. Phys. 80, 3739 (1996).