Coimplantation effects on the electrical properties of boron and aluminum acceptors in 4H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 685-688

  Itoh, H ^a,b   Troffer, T ^a   Pensl, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Aluminum Acceptor; Boron Acceptor; C Coimplantation; Ion Implantation; Si Coimplantation Electrical Properties

Indexed keywords

ALUMINUM; ELECTRIC PROPERTIES; HALL EFFECT; HYDROGEN; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS;

COIMPLANTATION EFFECTS; FREE HOLE CONCENTRATION;

SILICON CARBIDE;

EID: 0031675653     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (10)

1. G. Pensl, V.V. Afanas'ev, M. Bassler, M. Schadt, T. Troffer, J. Heindl, H.P. Strunk, M. Maier, and W.J. Choyke, Inst. Phys. Conf. Ser. 142 (1996), p.275.
2. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H.P. Strunk, and M. Maier, phys. stat. sol. (a) 162 (1997), p.277.
3. A.G. Zubatov, J.M. Zaritskii, S.N. Lukin, E.N. Mokhov, and V.G. Stepanov, Sov. Phys.-Solid State 27 (1985), p.197.
4. S.G.- Weber, phys. stat. sol. (a) 162 (1997), p.95.
5. D.J. Larkin, Inst. Phys. Conf. Ser. 142 (1996), p.23.
6. M.V. Rao and R.H. Nadella, J. Appl. Phys. 67 (1990), p.1761.
7. W. Suttrop, G. Pensl, and P. Lanig, Appl. Phys. A 51 (1990), p.231.
8. H. Itoh, A. Uedono, T. Ohshima, Y. Aoki, M. Yoshikawa, I. Nashiyama, S. Tanigawa, H. Okumura, and S. Yoshida, Appl. Phys. A 65 (1997), p.315.
9. M.V. Rao, P. Griffiths, J. Gardner, O.W. Holland, M. Gezzo, J. Kretchmer, G. Kelner, and J.A. Freitas, Jr., J. Electronic Materials, 25 (1996), p.75.
10. A. Kawasuso, H. Itoh, S. Okada, and H. Okumura, J. Appl Phys. 80 (1996), p.5639.