Phosphorus-implanted high-voltage n+p 4H-SiC junction rectifiers

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 387-390

  Patel, R ^a   Khemka, V ^a   Ramungul, N ^a   Chow, T P ^a   Ghezzo, M ^a   Kretchmer, J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; MATHEMATICAL MODELS; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

MULTIPLE-TRAP RECOMBINATION MODEL; POSITIVE TEMPERATURE COEFFICIENT;

ELECTRIC RECTIFIERS;

EID: 0031640929     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)