4H-SiC buried gate field controlled thyristor

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 34-35

  Singh, R ^a   Irvine, K G ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; LEAKAGE CURRENTS; SILICON CARBIDE;

BLOCKING GAIN; BURIED GATE FIELD CONTROLLED THYRISTORS (FCT); FORWARD BLOCKING VOLTAGE;

THYRISTORS;

EID: 0030683120     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)