Turn-off characteristics of 1000 V SiC gate-turn-off thyristors

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1998, Pages 131-134

  Seshadri, S ^a   Casady, J B ^a   Agarwal, A K ^a   Siergiej, R R ^a   Rowland, L B ^a   Sanger, P A ^a   Brandt, C D ^a   Barrow, J ^a   Piccone, D ^a   Rodrigues, R ^a   Hansen, T ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

GATE TURN-OFF (GTO) THYRISTORS;

THYRISTORS;

EID: 0031621748     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)