Static and dynamic characteristics of a 1100 V, double-implanted, planar, 4H-SiC PiN rectifier

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 137-140

  Khemka, V ^a   Patel, R ^a   Ramungul, N ^a   Chow, T P ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CARBON; ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

AUGER RECOMBINATION; PLANAR JUNCTION RECTIFIERS; SILICON CARBIDE RECTIFIERS;

SOLID STATE RECTIFIERS;

EID: 0032598932     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (15)