Theoretical prediction of zinc blende phase GaN avalanche photodiode performance based on numerically calculated electron and hole impact ionization rate ratio

Materials Research Society Symposium - Proceedings

Volumn 423, Issue , 1996, Pages 45-50

  Kolnik, J ^a   Oguzman, I H ^a   Brennan, K F ^a   Wang, R ^a   Ruden, P P ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; BAND STRUCTURE; BANDWIDTH; COMPUTATIONAL METHODS; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; IONIZATION OF SOLIDS; MONTE CARLO METHODS; ZINC COMPOUNDS;

CONDUCTION BANDS; GALLIUM NITRIDES; PSEUDOPOTENTIAL CALCULATIONS; VALENCE BANDS;

NITRIDES;

EID: 0030409789     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-423-45     Document Type: Conference Paper

References (12)