2.5 kV ion-implanted p+n diodes in 6H-SiC

Diamond and Related Materials

Volumn 6, Issue 10, 1997, Pages 1485-1488

  Rottner, K H ^a   Schoner A ^a   Savage, S M ^a   Frischholz, M ^a   Hallin, C ^b   Kordina, O ^b   Janzen E ^b  

^a ACREO AB   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

Diodes; Ion implantation; OBIC; Termination

Indexed keywords

EID: 0007526297     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(97)00060-5     Document Type: Article

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