Implantation of Al and B acceptors into alpha-SiC and pn junction diodes

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 701-704

  Takemura, O ^a   Kimoto, T ^a   Matsunami, H ^a   Nakata, T ^b   Watanabe, M ^b   Inoue, M ^b  

^a KYOTO UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

Author keywords

Acceptor; Electrical Activation; Ion implantation; pn Junction Diode

Indexed keywords

ALUMINUM; ANNEALING; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES;

ELECTRICAL ACTIVATION; JUNCTION DIODE;

SILICON CARBIDE;

EID: 0031648321     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.701     Document Type: Article

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