Measurement of electron and hole impact ionization coefficients for SiC

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1997, Pages 173-176

  Raghunathan, R ^a   Baliga, B J ^a  

^a Power Semiconductor Research Cent   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; ELECTRONS; IONIZATION OF SOLIDS; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS; VOLTAGE MEASUREMENT;

IMPACT IONIZATION COEFFICIENT;

SCHOTTKY BARRIER DIODES;

EID: 0030677887     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)