Topography simulation for the virtual wafer fab

Thin Solid Films

Volumn 365, Issue 2, 2000, Pages 152-175

  Cale, Timothy S ^a   Merchant, Tushar P ^b   Borucki, Leonard J ^b   Labun, Andrew H ^c,d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b MOTOROLA INC   (United States)

^c INTEL CORPORATION   (United States)

^d HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; COPPER; INTEGRATED CIRCUIT MANUFACTURE; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON WAFERS;

VIRTUAL WAFER FABRICATION;

SEMICONDUCTING FILMS;

EID: 0033734663     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00756-2     Document Type: Article

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