Three-dimensional simulation of HPCVD-linking continuum transport and reaction kinetics with topography simulation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 18, Issue 12, 1999, Pages 1741-1749

  Pyka, Wolfgang ^a   Fleischmann, Peter ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

High pressure chemical vapor deposition (hpcvd); Three dimensional simulation; Topography

Indexed keywords

EID: 0012485661     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.811323     Document Type: Article

References (22)

1. E. W. Scheckler and A. R. Neureuther, "Models and algorithms for three-dimensional topography simulation with SAMPLE-3D," IEEE Trans. Computer-Aided Design, vol. 13, pp. 219-230, Feb. 1994.
2. E. Bar and J. Lorenz, "3-D simulation of LPCVD using segment-based topography discretization," IEEE Trans. Semiconduct. Manufact., vol. 9, pp. 67-73, Jan. 1996.
3. J. A. Sethian and D. Adalsteinsson, "An overview of level set methods for etching, deposition, and lithography development," IEEE Trans. Semiconduct. Manufact., vol. 10, pp. 167-184, Jan. 1997.
4. Z.-K. Hsiau, E. C. Kan, J. P. McVittie, and R. W. Dutton, "Robust, stable, and accurate boundary movement for physical etching and deposition simulation," IEEE Trans. Electron Devices, vol. 44, pp. 1375-1385, Sept. 1997.
5. M. Fujinaga and N. Kotani, "3-D topography simulator (3-D MULSS) based on a physical description of material topography," IEEE Trans. Electron Devices, vol. 44, pp. 226-238, Feb. 1997.
6. S. Hamaguchi and S. M. Rossnagel, "Simulation of trench-filling profiles under ionized magnetron sputter metal deposition," J. Vac. Sei. Technol. B, vol. 13, no. 2, pp. 183-191, 1995.
7. M. K. Sheergar, T. Smy, S. K. Dew, and M. J. Brett, "Simulation of three-dimensional refractory metal step coverage over contact cuts and vias," J. Vac. Sei. Technol. B, vol. 14, no. 4, pp. 2595-2602, 1996.
8. J. P. Chang, A. P. Mahorowala, and H. H. Sawin, "Plasma-surface kinetics and feature profile evolution in chlorine etching of polysilicon," J. Vac. Sei. Technol. A, vol. 16, no. 1, pp. 217-224, 1998.
9. R. J. Hoekstra and M. J. Kushner, "Comparison of two-dimensional and three-dimensional models for profile simulation of poly-Si etching of finite length trenches," J. Vac. Sei. Technol. A, vol. 16, no. 6, pp. 3274-3280, 1998.
10. H. Liao and T. S. Cale, "Low-Knudsen-number transport and déposition," J. Vac. Sei. Technol. A, vol. 12, no. 4, pp. 1020-1026, 1994.
11. "Three-dimensional simulation of an isolation trench refill process," Thin Solid Films, vol. 236, pp. 352-358, 1993.
12. E. W. Scheckler, "Algorithms for three-dimensional simulation of etching and deposition processes in integrated circuit fabrication", Ph.D. Dissertation, Univ. of California, Berkeley, 1991.
13. W. Pyka and S. Selberherr, "Three-dimensional simulation of TIN magnetron sputter deposition," in 28th European Solid-State Device Research Conf., A. Touboul, Y. Danto, J.-P. Klein, and H. Grünbacher, Eds. Bordeaux, France: Editions Frontieres, 1998, pp. 324-327.
14. V. Sukharev, K. Kumar, and E. J. Mclnerney, "An integrated simulation of across-wafer uniformity in Ti/TiN/W plug-fill," in Proc. 15th Int. VLSI Multilevel Interconnection Conf., Santa Clara, CA, 1998, pp. 306-311.
15. W. E. Lorensen and H. E. Cline, "Marching cubes: A high resolution 3D surface construction algorithm," Comput. Graph., vol. 21, no. 4, pp. 163-169, 1987.
16. W. J. Schroeder, J. A. Zarge, and W. E. Lorenson, "Decimation of triangle meshes," Comput. Graph., vol. 26, no. 2, pp. 65-70, 1992.
17. P. Fleischmann, W. Pyka, and S. Selberherr, "Mesh generation for application in technology CAD," IEICE Trans. Electronics, vol. E82-C, no. 6, pp. 937-947, 1999.
18. M. Radi, E. Leitner, and S. Selberherr, "Amigos: Analytical model interface & general object-oriented solver," IEEE J. Technol. Computer-Aided Design [Online], vol. 18. Available: HTTP: http: //www.ieee.org/products/online/journal/tcad/accepted/radi-feb99/
19. E. Strasser and S. Selberherr, "Algorithms and models for cellular based topography simulation," IEEE Trans. Computer-Aided Design, vol. 14, pp. 1104-1114, Sept. 1995.
20. W. Pyka, R. Martins, and S. Selberherr, "Efficient algorithms for three-dimensional etching and deposition simulation," in Simulation of Semiconductor Processes and Devices, K. De Meyer and S. Biesemans, Eds. Leuven, Belgium: Springer, 1998, pp. 16-19.
21. E. J. Kirn and W. N. Gill, "Modeling of CVD of silicon dioxide using TEOS and ozone in a single-wafer reactor," J. Electrochem. Soc., vol. 141, no. 12, pp. 3462-3472, 1994.
22. E. J. Mclnerney, T. W. Mountsier, and E. K. Broadbent, "A new analytic rate expression for hydrogen reduced tungsten," in Conf. Proc. ULS1-V1H, Materials Research Society, 1993, pp. 161-167.