A chemical mechanism for in situ boron doping during silicon chemical vapor deposition

Thin Solid Films

Volumn 365, Issue 2, 2000, Pages 231-241

  Lengyel, Istvan ^a,b   Jensen, Klavs F ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b DOW CHEMICAL COMPANY   (United States)

Author keywords

Borane; Chemical vapor deposition simulation; Dichlorosilane; Mechanism; Quantum chemistry predictions; Sensitivity analysis

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; FINITE ELEMENT METHOD; QUANTUM THEORY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; THIN FILMS;

QUANTUM CHEMISTRY;

SEMICONDUCTING FILMS;

EID: 0033743737     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00758-6     Document Type: Article

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