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Volumn 147, Issue 2, 2000, Pages 723-730
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Programmed rate chemical vapor deposition protocols
a,b,c,d,e
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM;
DEGREES OF FREEDOM (MECHANICS);
DENSITY (SPECIFIC GRAVITY);
ELECTRIC CONDUCTIVITY;
FILM PREPARATION;
PHYSICAL PROPERTIES;
REFLECTION;
SURFACE ROUGHNESS;
TEMPERATURE;
THIN FILMS;
TUNGSTEN;
CONSTANT RATE CHEMICAL VAPOR DEPOSITION;
NUCLEI DENSITIES;
PRECURSOR FLOW;
PROGRAMMED RATE CHEMICAL VAPOR DEPOSITION;
PULSING;
CHEMICAL VAPOR DEPOSITION;
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EID: 0034139979
PISSN: 00134651
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1393259 Document Type: Article |
Times cited : (5)
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References (17)
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