Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum

Journal of Materials Research

Volumn 14, Issue 5, 1999, Pages 1982-1989

  Jonnalagadda, R ^a   Yang, D ^b   Rogers, B R ^c   Hillman, J T ^d   Foster, R F ^d   Cale, T S ^b  

^a HONEYWELL   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c VANDERBILT UNIVERSITY   (United States)

^d Tokyo Electron Arizona Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CONDUCTIVITY OF SOLIDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; SUBSTRATES; SURFACE ROUGHNESS; TEXTURES; THERMAL EFFECTS;

ALUMINUM FILM; NUCLEATION DENSITY;

METALLIC FILMS;

EID: 0032674739     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.1999.0267     Document Type: Article

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