Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Journal of Crystal Growth

Volumn 204, Issue 4, 1999, Pages 419-428

  Weyher, J L ^a,b   Brown, P D ^c   Zauner, A R A ^a   Muller S ^d   Boothroyd, C B ^c   Foord, D T ^c   Hageman, P R ^a   Humphreys, C J ^c   Larsen, P K ^a   Grzegory, I ^b   Porowski, S ^b  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032689397     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00217-1     Document Type: Article

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