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Volumn 166, Issue 1-4, 1996, Pages 583-589
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High pressure growth of GaN - New prospects for blue lasers
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL GROWTH;
CRYSTAL STRUCTURE;
DISLOCATIONS (CRYSTALS);
NITRIDES;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR LASERS;
SUBSTRATES;
THERMODYNAMIC PROPERTIES;
GALLIUM NITRIDE;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0030231076
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(96)00116-9 Document Type: Article |
Times cited : (151)
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References (17)
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