Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

Journal of Electronic Materials

Volumn 25, Issue 9, 1996, Pages 1545-1550

  Liliental Weber, Zuzanna ^a   Kisielowski, C ^a   Ruvimov, S ^a   Chen, Y ^a   Washburn, J ^a   Grzegory, I ^b   Bockowski, M ^b   Jun, J ^b   Porowski, S ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Bulk GaN; Crystal polarity; Excess Ga; Microstructure; Planar defects; Surface roughness

Indexed keywords

EID: 0000437306     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/bf02655397     Document Type: Article

References (22)

1. T.D. Moustakas and R.J. Molnar, Mater. Res. Soc. Conf. Proc. 281, 753 (Pittsburgh, PA: Mater. Res. Soc., 1993).
2. M.E. Lin, G. Xue, G.L. Zhou, J.E. Green and H. Morkoç, Appl. Phys. Lett. 63, 932 (1993).
3. C. Wang and R.F. Davis, Appl.Phys. Lett. 63, 990 (1993).
4. N. Newman, J. Ross and M. Rubin, Appl. Phys. Lett. 62, 1242 (1993).
5. M. Mizuta, S. Fujieta, Y. Matsumoto and T. Kawamura, Jpn. J. Appl. Phys. 25, L945 (1986).
6. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
7. S. Nakamura, M. Senoh, N. Iwasa and S. Nagahama, Jpn. J. Appl. Phys. 34, L979 (1995).
8. A.H. Herzog, D.L. Keune and M.G. Craford, J. Appl. Phys. 43, 600 (1972).
9. R.J. Roedel, A.R. von Neida, R. Causo and L.R. Dawson, J. Electron. Soc. 126, 641 (1979).
10. G.B. Stringfellow, P.F. Lindguist, T.R. Cass and R.A. Burmeister, J. Electron. Mater. 3, 497 (1974).
11. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35, L217 (1996).
12. S.D. Lester, F.A. Ponce, M.G. Craford and D.A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995).
13. Ch. Kisielowski, S. Ruvimov and Z. Liliental-Weber, unpublished.
14. Z. Liliental-Weber, S. Ruvimov, Ch. Kisielowski, Y. Chen, W. Swider, J. Washburn, N. Newman, A. Gassmann, X. Liu, L. Schloss, E.R. Weber, I. Grzegory, M. Bockowski, J. Jun, T. Suski, K. Pakula, J. Baranowski, S. Porowski, A. Amano and I. Akasaki, Mater. Res. Soc. Proc. 395, (Pittsburgh, PA: Mater. Res. Soc., 1996) in print.
15. S. Porowski, I. Grzegory and J. Jun, High Pressure Chemical Synthesis eds. J. Jurczak and B. Baranowski, (Elsevier Science Publishers, B.V. 1989), p. 21.
16. S. Porowski and I. Grzegory, Properties of Group III Nitrides ed. James H. Edgar, EMIS Data-reviews Series No. 11 (1994), p. 76.
17. M. Leszczynski, T. Suski, P. Perlin, I. Grzegory, M. Bockowski, J. Jun, S. Porowski and J. Major, J. Phys. D. Appl. Phys. 28, A 149 (1995).
18. Z. Liliental-Weber and L. Parechanian-Allen, Appl. Phys. Lett. 49, 1190 (1986).
19. J.C. H. Spence and J.M. Zuo, Electron Microdiffraction (New York and London: Plenum Press, 1992), p. 131.
20. M. Leszczynski, I. Grzegory, H. Teisseyre, T. Suski, M. Bockowski, J. Jun, J.M. Baranowski, S. Porowski and J. Domagala, Appl. Phys. Lett. 69, 73 (1996).
21. Z. Liliental-Weber, J. Washburn, F. Smith and A.R. Calawa, Appl. Phys. A53, 141 (1991).
22. D. Hull and D. J. Bacon, Introduction to Dislocations, 3rd Ed., Intl. Series on Materials Science and Technology, (Oxford, New York, Beijing, Frankfurt, Sao Paulo, Sydney, Tokyo, Toronto: Pergamon Press, 1984), p. 112.