Structural and optical properties of homoepitaxial GaN layers

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 393-404

  Baranowski, J M ^a   Liliental Weber, Z ^a   Korona, K ^a   Pakula, K ^a   Stepniewski, R ^a   Wysmolek, A ^a   Grzegory, I ^a   Nowak, G ^a   Porowski, S ^a   Monemar, B ^a   Bergman, P ^a  

^a UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSCOPIC EXAMINATION; NITRIDES; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; HOMOEPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0030644979     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (23)