An atomic force microscopy study of a temperature dependent morphology transition of GaN grown on sapphire by MOCVD

Journal of Crystal Growth

Volumn 197, Issue 1-2, 1999, Pages 37-47

  De Theije, F K ^a   Zauner, A R A ^a   Hageman, P R ^a   Van Enckevort, W J P ^a   Larsen, P K ^a  

^a RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

AFM; GaN; Growth kinetics; Hollow cores; Morphology

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTOR GROWTH;

EID: 0033080272     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00954-3     Document Type: Article

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