Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 306-310

  Li, X ^a   Jones, A M ^a   Roh, S D ^a   Turnbull, D A ^a   Bishop, S G ^a   Coleman, J J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Cathodoluminescence (CL); Cathodoluminescence imaging; Gallium nitride (GaN); Metalorganic chemical vapor deposition (MOCVD); Selective area epitaxy

Indexed keywords

EID: 0000185016     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0169-6     Document Type: Article

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