Convergent beam electron diffraction and transmission electron microscopy study of interfacial defects in gallium nitride homoepitaxial films

Microscopy and Microanalysis

Volumn 3, Issue 5, 1997, Pages 436-442

  Liliental Weber, Z ^a   Washburn, Jack ^a   Pakula, K ^b   Baranowski, J ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF WARSAW   (Poland)

Author keywords

Convergent beam electron diffraction; Crystal polarity; Homoepitaxial GaN; Inversion domains; Pinholes; Threading dislocations

Indexed keywords

EID: 0031534746     PISSN: 14319276     EISSN: None     Source Type: Journal    
DOI: 10.1017/s1431927697970331     Document Type: Article

References (12)

1. Baranowski JM, Liliental-Weber Z, Korona K, Pakula K, Stepniewski R, Wysmolek A, Grzegory I, Nowak G, Porowski S, Monemar B, Bergman P (1997) Structural and optical properties of homoepitaxial GaN layers. Mater Res Soc Symp Proc 449:393-404
2. Gassmann A, Suski T, Newman N, Kisielowski C, Jones E, Weber ER, Liliental-Weber Z, Rubin M, Helawa HI, Grzegory I, Bockowski M, Jun J, Porowski S (1996) Homoepitaxial growth of GaN using molecular beam epitaxy. J Appl Phys 80:1342
3. V semiconducting compounds under high pressure of nitrogen. Physica Scripta T39:242-249
4. Liliental-Weber Z, Parechanian-Allen L (1986) Determination of As and Ga planes by convergent beam electron diffraction. Appl Phys Lett 49:1190
5. Liliental-Weber Z, Sohn H, Newman N, Washburn J (1995) Electron microscopy characterization of GaN grown by MBE on sapphire and SiC. J Vac Sci Technol B 13:1578
6. Liliental-Weber Z, Ruvimov S, Kisielowski C, Chen Y, Swider W, Washburn J, Newman N, Gassmann A, Liu X, Schloss L, Weber ER, Grzegory I, Bockowski M, Jun M, Suski T, Pakula K, Baranowski J, Porowski S, Amano H, Akasaki I (1996a) Structural defects in heteroepitaxial and homoepitaxial GaN. Mater Res Soc Symp Proc 395:351
7. Liliental-Weber Z, Kisielowski C, Ruvimov S, Chen Y, Washburn J, Grzegory I, Bockowski M, Jun J, Porowski A (1996b) Structural characterization of bulk GaN crystals grown under high hydrostatic pressure. J Electr Mater 25:1545-1550
8. Nakamura S, Senoh M, Iwasa N, Nagahama S (1995) High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. Jpn J Appl Phys 34:L797-L799
9. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y (1996) InGaN multi-quantum-well-structure laser diodes with cleved mirror cavity facets. Jpn J Appl Phys 35:L217-L219
10. Ponce FA, Bour DP, Young WT, Saunders M, Steeds JW (1996) Determination of lattice polarity for growth of GaN bulk single crystals and epitaxial layers. Appl Phys Lett 69:337-339
11. Romano LT, Northrup JE, O'Keefe M (1996) Inversion domains in GaN grown on sapphire. Appl Phys Lett 69:2394-2396
12. Wu XH, Fini P, Keller S, Tarsa EJ, Keying B, Mishra UK, DenBaars SP, Speck JS (1996) Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition. Jpn J Appl Phys 35:L1648-L1651