Micro structure and growth morphology as related to electro-optical properties of heteroepitaxial wurtzite GaN on sapphire (0001) substrates

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 296-302

  Christiansen, S ^a   Albrecht, M ^a   Dorsch, W ^a   Strunk, H P ^a   Pelzmann, A ^b   Mayer, M ^b   Kamp, M ^b   Ebeling, K J ^b   Zanotti Fregonara, C ^c   Salviati, G ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c CNR   (Italy)

Author keywords

Burgers vector; Epitaxial; Luminescence

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL MICROSTRUCTURE; DEPOSITION; FILM GROWTH; MORPHOLOGY; NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); SURFACE TOPOLOGY; WURTZITE GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0008261453     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01879-X     Document Type: Article

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