Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphire

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 161-166

  Rouviere J L ^a   Arlery, M ^a   Niebuhr, R ^b   Bachem, K H ^b   Briot, O ^c  

^a CEA GRENOBLE   (France)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c UNIV MONTPELLIER   (France)

Author keywords

Buffer layers; Inversion domains; Transmission electron microscopy

Indexed keywords

CRYSTAL MICROSTRUCTURE; DIFFUSION IN SOLIDS; FILM GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; NITRIDING; SAPPHIRE; SEMICONDUCTING FILMS; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; GALLIUM NITRIDES; INVERSION DOMAINS (ID); POLARITY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0038017385     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01855-7     Document Type: Article

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