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Materials Science and Engineering B

Volumn 50, Issue 1-3, 1997, Pages 93-96

Transmission electron microscopy characterisation of metalorganic chemical vapour deposition grown GaN layers

(7) Pecz B a Di Forte Poisson, M A b Toth L a Radnoczi G a Huhn, G a Papaioannou, V c Stoemenos, J c

a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE (Hungary)

b Thomson LCR (France)

c ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

Author keywords

AFM; MOCVD; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL MICROSCOPY; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

INVERSION DOMAIN BOUNDARIES (IDB);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0344236915 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(97)00176-1 Document Type: Article

Times cited : (5)

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