Simulation and Design of InAlAs/InGaAs pnp Heterojunction Bipolar Transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1634-1643

  Datta, Suman ^a,b   Shi, Shen ^a,b   Roenker, Kenneth P ^a,c   Cahay, Marc M ^a,c   Stanchina, William E ^a,d  

^a IEEE   (United States)

^b University of Cincinnati   (United States)

^c SGS Thompson Microelectronics   (United States)

^d Hughes Aircraft Co   (United States)

Author keywords

Hbt's; Ingaas; Modeling; Pnp

Indexed keywords

CIRCUIT OSCILLATIONS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TRANSPORT PROPERTIES; INTEGRATED CIRCUIT LAYOUT; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

CURRENT GAIN; CUTOFF FREQUENCY; HOLE MOBILITY; POWER GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032142245     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704357     Document Type: Article

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