In0.52 Al0.48 As/In0.53 Ga0.47 As Double-Heterojunction p-n-p Bipolar Transistors Grown by Molecular Beam Epitaxy

IEEE Electron Device Letters

Volumn 9, Issue 7, 1988, Pages 334-336

  Won, T ^a   Peng, C K ^a   Chyi, J ^a   Morkoç, Hadis ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS - GROWTH;

DOUBLE-HETEROJUNCTION BIPOLAR TRANSISTORS (DHBT); MOLECULAR BEAM EPITAXY; NONALLOYED EMITTER AND BASE CONTACTS; VALENCE-BAND DISCONTINUITY SMOOTHING;

TRANSISTORS, BIPOLAR;

EID: 0024051029     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.735     Document Type: Article

References (13)

1. K. C. Wang, P. M. Asbeck, M. F. Chang, G. J. Sullivan, and D. L. Miller, “A 20 GHz frequency divider implemented with heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-8, pp. 383-385, 1987.
2. K. Nagata, O. Nakajima, Y. Yamauchi, T. Nittono, H. Ito, and T. Ishibashi, “Self-aligned AlGaAs/GaAs HBT with low emitter resistance utilizing InGaAs cap layer,” IEEE Trans. Electron Devices, vol. 35, pp. 2-7, 1988.
3. J. A. Hutchby, “High-performance P-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis,” IEEE Electron Device Lett., vol. EDL-7, pp. 108-111, 1986.
4. D. A. Sunderland and P. D. Dapkus, “Optimizing N-p-n and P-n-p heterojunction bipolar transistors for speed,” IEEE Trans. Electron Devices, vol. ED-34, pp. 367-377, 1987.
5. D. A. Sunderland et al., “A fully planar p-n-p heterojunction bipolar transistor,” IEEE Electron Device Lett., vol. EDL-9, pp. 116-118, Mar. 1988.
6. W. Lee and C. G. Fonstad, “Application of O+ implantation in inverted InGaAs/InAlAs heterojunction bipolar transistors,” IEEE Electron. Device Lett., vol. EDL-8, pp. 217-219, 1987.
7. C. K. Peng, T. Won, C. W. Litton, and H. Morkoç, “A high-performance InGaAs/InAlAs double-heterojunction bipolar transistor with nonalloyed n+-InAs cap layer on InP(n) grown by molecular beam epitaxy,” IEEE Electron Device Lett., vol. 9, pp. 331-333, July 1988.
8. R. J. Malik, J. R. Hayes, F. Capasso, K. Alavi, and A. Y. Cho, “High-gain Al0.48ln0.52As/In0.47Ga0.53As vertical n-p-n heterojunction bipolar transistors grown by molecular beam epitaxy,” IEEE Electron Device Lett., vol. EDL-4, pp. 383-385, 1983.
9. P. Narozny and H. Beneking, “Double heterojunction GaAs/AlGaAs PL inverter,” Electron. Lett., vol. 21, p. 328, 1985.
10. K. Tabatabaie-Alavi et al., “Ion-implanted In0.53Ga0.47As/In0.52Al0.48As lateral PnP transistors,” IEEE Electron Device Lett., vol. EDL-3, pp. 379-381, 1982.
11. N. Chand, T. Henderson, R. Fischer, W. Kopp, and H. Morkoç, “A PnP AlGaAs/GaAs heterojunction bipolar transistor,” Appl. Phys. Lett., vol. 46, pp. 302-304, 1985.
12. S. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
13. T. Won and H. Morkoç, “highspeed performance of InP/In0.53-Ga0.47As/InP double heterojunction bipolar transistors,” Appl. Phys. Lett., pp. 552-554, 1988.