High-Performance P-n-p AlGaAs/GaAs Heterojunction Bipolar Transistors: A Theoretical Analysis

IEEE Electron Device Letters

Volumn 7, Issue 2, 1986, Pages 108-111

  Hutchby, James A ^a  

^a RTI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES - HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

TRANSISTORS, BIPOLAR;

EID: 0022665367     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26310     Document Type: Article

References (23)

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