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Volumn 18, Issue 1, 1995, Pages 9-19

Simulation study of InP-based PNP heterojunction bipolar transistors and incorporation of nonclassical effects

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EID: 0029489174     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1995.1083     Document Type: Article
Times cited : (3)

References (62)
  • 40
    • 0345436597 scopus 로고
    • Ch. 9, T. P. Pearsall, Ed., Wiley, New York
    • Y. Takeda, Ch. 9 in: GaInAsP Alloy Semiconductors, T. P. Pearsall, Ed., Wiley, New York: P. 213 (1982).
    • (1982) Gainasp Alloy Semiconductors , pp. 213
    • Takeda, Y.1
  • 46
    • 77957045562 scopus 로고
    • Ch. 2, Transport Phenomena, R. K. Willardson and A. C. Beer, Eds, Academic Press, Boston
    • J. D. Wiley. Ch. 2 in: Semiconductors and Semimetals, vol. 10, Transport Phenomena, R. K. Willardson and A. C. Beer, Eds, Academic Press, Boston: P. 91 (1975).
    • (1975) Semiconductors and Semimetals , vol.10 , pp. 91
    • Wiley, J.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.