AlGaAs/GaAs P-n-p HBT’s with High Maximum Frequency of Oscillation

IEEE Electron Device Letters

Volumn 11, Issue 10, 1990, Pages 463-465

  Sullivan, G J ^a   Chang, M F ^a   Sheng, Neng Haung ^a   Anderson, R J ^a   Wang, Nan Lei ^a   Wang, Keh Chung ^a   Higgins, John A ^a   Asbeck, Peter M ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS--OSCILLATIONS;

ALUMINUM GALLIUM ARSENIDE; OSCILLATION FREQUENCY;

TRANSISTORS, BIPOLAR;

EID: 0025505307     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.62997     Document Type: Article

References (10)

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