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Journal of Applied Physics

Volumn 52, Issue 10, 1981, Pages 6328-6330

Tin doping in Ga0.47In0.53As and Al 0.48In0.52As grown by molecular-beam epitaxy

(3) Cheng, K Y a Cho, A Y a Wagner, W R a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS - DOPING; SEMICONDUCTING INDIUM COMPOUNDS - DOPING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0019625470 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.328537 Document Type: Article

Times cited : (41)

References (15)

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- Cho, A.Y.¹ Cheng, K.Y.²

2
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- Cheng, K.Y.¹ Cho, A.Y.² Wagner, W.R.³ Bonner, W.A.⁴

3
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- Miller, B.I.¹ McFee, J.H.² Martin, R.J.³ Tien, P.K.⁴

4
- 33646914608
- (1980) Appl. Phys. Lett , vol.37 , pp. 730
- Lee, T.P.¹ Burrus, C.A.² Cho, A.Y.³ Cheng, K.Y.⁴ Manchon, D.D.⁵

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- 0019050808
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6
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- Matyas, E.E.¹

7
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- Perea, E.H.¹ Fonstad, C.G.² Quillec, M.³

8
- 0019588608
- (1981) J. Appl. Phys , vol.52 , pp. 4672
- Cheng, K.Y.¹ Cho, A.Y.² Bonner, W.A.³

9
- 49549139409
- (Pergamon, New York), Vol. 10,.edited by G. Somorjai and J. McCaldin
- (1975) Progress in Solid State Chemistry , pp. 157
- Cho, A.Y.¹ Arthur, J.R.²

10
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- (to be published).
- Appl. Phys. Lett.
- Cheng, K.Y.¹ Cho, A.Y.² Wagner, W.R.³

11
- 0003459433
- (American Society for Metals, Metals Park, Ohio)
- (1973) Selected Values of the Thermodynamic Properties of the Elements
- Hultgren, R.¹ Desai, P.D.² Hawkins, D.T.³ Gleiser, M.⁴ Kelley, K.K.⁵ Wagman, D.D.⁶

12
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- (1979) Jpn. J. Appl. Phys , vol.18 , pp. 565
- Asahi, H.¹ Okamoto, H.² Ikeda, M.³ Kawamura, Y.⁴

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- 0019044532
- (1980) IEEE J. Quantum Electron , vol.16 , pp. 709
- Pearsall, T.P.¹

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- (1980) Jpn. J. Appl. Phys , vol.19 , pp. 383
- Takeda, Y.¹ Sasaki, A.²

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- 0019530077
- (1981) Electron. Lett , vol.17 , pp. 169
- Pearsall, T.P.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.