Simulation of PNP InAlAs/InGaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1466-1467

  Shi, S ^a   Roenker, K P ^a   Kumar, T ^a   Cahay, M M ^b   Stanchina, William E ^b  

^a University of Cincinnati   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES;

COLLECTOR CURRENT DENSITY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0030241525     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535334     Document Type: Article

References (15)

1. J. A. Hutchby, "High-performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis," IEEE Electron Device Lett., vol. 7. pp. 108-111, 1986.
2. D. A. Sunderland and P. D. Dapkus, "Optimizing n-p-n and p-np heterojunction bipolar transistors for speed," IEEE Trans. Electron Devices, vol. ED-34, pp. 367-377, 1987.
3. Y. S. Yuan, "High-performance p-n-p heterojunction bipolar transistor design," Solid-State Electron., vol. 34, pp. 1347-1352, 1991.
4. W. E. Stanchina, R. A. Metzger, M. W. Pierce, J. F. Jensen, L. G. McCray. R. Wcmg-Qiien, and F. Williams, "Monolithic fabrication of npn and pnp AlInAs/GalnAs HBT's," in Proc. Fifth Int. Conf. on InP and Related Materials, 1993, pp. 569-571.
5. [51 W. E. Stanchina, R. A. Metzger, D. B. Rensch, L. M. Burns, J. F. Jensen, R. H. Waiden, L. E. Larson, and P. T. Greiling, "InP based technology for monolithic multiple-device, multiple-function IC's," in 7997 GOMAC-91 Dig. Papers, pp. 385-388.
6. L. M. Lunardi, S. Chandrasckhar, and R. A. Hamm, "High-speed, highcurrent-gain pnp InP/InGaAs heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 14, pp. 19-21, 1993.
7. T. Won, C. K. Peng, J. Chyi, and H. Morkoc, "InAlAs/InGaAs doubleheterojunction pnp bipolar transistors grown by molecular beam epitaxy," IEEE Electron Device Lett., vol. 9, pp. 334-336, 1988.
8. A. Nakagawa and K. Inoue, "Symmetric pnp InAlAs/InGaAs double heterojunction bipolar transistors fabricated with Si-ion implantation," IEEE Electron Device Lett, vol. 13, pp. 285-287, 1992.
9. H. Q. Tseiug, D. G. Hill, and T. S. Kim, "A 0.5-W complementary AIGaAs-GaAs HBT push-pull amplifier at 10 GHz," IEEE Microwave Guided Wave Lett., vol. 3, pp. 45-47, 1993.
10. D. B. Slater, P. M. Enquist, F. E. Najjar, M. Y. Chen, and J. A. Ilutchby, "Demonstration of a monolithic npn and pnp complementary HBT technology," in SPIE Proc. High Speed Electronics and Device Scaling, 1990, vol. 1288, pp. 90-105.
11. SEMICAD Device (Version 1.2), Dawn Technologies.
12. S. Selberherr, Analysis and Simulation of Semiconductor Devices. Vienna, Austria: Springer-Verlag, 1984, p. 80.
13. D. M. Caughey and R. E. Thomas, "Carrier mobilities in silicon empirically related to doping and field," in Proc. IEEE, 1967, vol. 55, pp. 2192-2193
14. V. Swaminathan and A. T. Macrander, Materials Aspects o/GaAs and [nP Based Structures. New York: Prentice Hall, 1991, p. 15.
15. S. Adachi, Physical Properties of HI-V Semiconductor Compounds. New York: Wiley, 1992, p. 96.