High-performance P-n-p heterojunction bipolar transistor design

Solid State Electronics

Volumn 34, Issue 12, 1991, Pages 1347-1352

  Yuan, J S ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL--MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS--APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTOR DEVICES--HETEROJUNCTIONS; TRANSISTORS, BIPOLAR--PERFORMANCE;

ANALOG CIRCUITS; DEVICE DOPING PROFILE DESIGN; N-P-N HETEROJUNCTION BIPOLAR TRANSISTORS; P-N-P HETEROJUNCTION BIPOLAR TRANSISTORS; SPICE CIRCUIT SIMULATION;

TRANSISTORS, BIPOLAR;

EID: 0026402753     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(91)90028-W     Document Type: Article

References (17)

1. The method of estimating delay in switching circuits and the figure of merit of a switching transistor
2. Bipolar transistor design for optimized power-delay logic circuits
3. On the estimation of base transit time in AlGaAs/GaAs bipolar transistors
4. Electron velocity overshoot in the collector depletion layer of AlGaAs/GaAs HBT's
5. Base-collector junction capacitance of bipolar transistors operating at high current densities
6. High current regimes in transistor collector regions