-
1
-
-
0015417380
-
Merged-transistor logic (MTL): A low-cost bipolar logic concept
-
Oct.
-
H. H. Berger and S. K. Wiedmann, ,Merged-transistor logic (MTL): A low-cost bipolar logic concept,- IEEE J. Solid State Circuits, vol. SC-7, pp. 340-346, Oct. 1972.
-
(1972)
IEEE J. Solid State Circuits
, vol.SC-7
, pp. 340-346
-
-
Berger, H.H.1
Wiedmann, S.K.2
-
2
-
-
0015416865
-
Integrated injection logic: A new approach to LS
-
Oct.
-
K. Hart and A. Slob,- Integrated injection logic: A new approach to LS,- IEEE J. Solid State Circuits, vol. SC-7, pp. 346-351, Oct. 1972.
-
(1972)
IEEE J. Solid State Circuits
, vol.SC-7
, pp. 346-351
-
-
Hart, K.1
Slob, A.2
-
3
-
-
0019047399
-
A 1-μm bipolar VLSI technology
-
Aug.
-
S. A. Evans, S. A. Morris, L. A. Arledge, Jr., J. O. Englade, and C. R. Fuller,- A 1-μm bipolar VLSI technology,- IEEE Trans. Electron Devices, vol. ED-27, pp. 1373-1379, Aug. 1980.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 1373-1379
-
-
Evans, S.A.1
Morris, S.A.2
Arledge, L.A.3
Englade, J.O.4
Fuller, C.R.5
-
4
-
-
0020293028
-
290 psec I2 L circuits with five-fold self-alignment
-
T. Nakamura et al., ,290 psec I2 L circuits with five-fold self-alignment,- in IEDM Tech. Dig., 1982, p. 684.
-
(1982)
IEDM Tech. Dig.
, pp. 684
-
-
Nakamura, T.1
-
5
-
-
0019918412
-
Heterostructure bipolar transistors and integrated circuit
-
Jan.
-
H. Kroemer,- Heterostructure bipolar transistors and integrated circuit,- Proc. IEEE, vol. 70, pp. 13-25, Jan. 1982.
-
(1982)
Proc. IEEE
, vol.70
, pp. 13-25
-
-
Kroemer, H.1
-
6
-
-
0020168261
-
Gate delays of InGaAs/InP heterojunction integrated injection logic
-
Aug.
-
K. Tabatabaie-Alavi and C. G. Fonstad, ,Gate delays of InGaAs/InP heterojunction integrated injection logic,- IEEE Electron Device Lett., vol. EDL-3, pp. 200-202, Aug. 1982.
-
(1982)
IEEE Electron Device Lett.
, vol.EDL-3
, pp. 200-202
-
-
Tabatabaie-Alavi, K.1
Fonstad, C.G.2
-
7
-
-
0021898482
-
GaAs bipolar digital integrated circuits
-
N. G. Einspruch, Ed. New York: Academic
-
H. T. Yuan, W. V. McLevige, and H. D. Shih, ,GaAs bipolar digital integrated circuits,- in VLSI Electronics: Microstructure Science, vol. 11, N. G. Einspruch, Ed. New York: Academic, 1985.
-
(1985)
VLSI Electronics: Microstructure Science
, vol.11
-
-
Yuan, H.T.1
McLevige, W.V.2
Shih, H.D.3
-
8
-
-
0021422166
-
Fabrication and characteristics of ion-implanted GaAs/GaAlAs integrated injection logic inverter
-
P. Narozny and H. Beneking, ,Fabrication and characteristics of ion-implanted GaAs/GaAlAs integrated injection logic inverter,- Electron. Lett., vol. 20, pp. 442-443, 1984.
-
(1984)
Electron. Lett.
, vol.20
, pp. 442-443
-
-
Narozny, P.1
Beneking, H.2
-
9
-
-
0022045388
-
Double heterojunction GaAs/GaAlAs I 2 L inverter
-
Apr.
-
P. Narozny and H. Beneking, ,Double heterojunction GaAs/GaAlAs I 2 L inverter,- Electron. Lett., vol. 21, pp. 328-329, Apr. 1985.
-
(1985)
Electron. Lett.
, vol.21
, pp. 328-329
-
-
Narozny, P.1
Beneking, H.2
-
10
-
-
0024749938
-
The development of heterojunction integrated injection logic
-
Oct.
-
H. T. Yuan, H. D. Shih, J. Delaney, and C. Fuller, ,The development of heterojunction integrated injection logic,- IEEE Trans. Electron Devices, vol. 36, p. 2083-2092, Oct. 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.36
, pp. 2083-2092
-
-
Yuan, H.T.1
Shih, H.D.2
Delaney, J.3
Fuller, C.4
-
11
-
-
0025419765
-
Monolithic integration of complementary HBT's by selective MOVPE
-
Apr.
-
D. B. Slater, Jr., P. M. Enquist, F. E. Najjar, M. Y. Chen, and J. A. Hutchby, ,Monolithic integration of complementary HBT's by selective MOVPE,- IEEE Electron Device Lett., vol. 11, pp. 146-148, Apr. 1990.
-
(1990)
IEEE Electron Device Lett.
, vol.11
, pp. 146-148
-
-
Slater, D.B.1
Enquist, P.M.2
Najjar, F.E.3
Chen, M.Y.4
Hutchby, J.A.5
-
12
-
-
0016963360
-
High speed integrated injection logic (I 2 L)
-
June
-
C. Mulder and H. E. J. Wulms, ,High speed integrated injection logic (I 2 L),- IEEE J. Solid State Circuits, vol. SC-11, pp. 379-385, June 1976.
-
(1976)
IEEE J. Solid State Circuits
, vol.SC-11
, pp. 379-385
-
-
Mulder, C.1
Wulms, H.E.J.2
-
13
-
-
0025692514
-
Demonstration of a monolithic Npn and Pnp complementary HBT technology
-
D. B. Slater, Jr., P. M. Enquist, F. E. Najjar, M. Y. Chen, and J. A. Hutchby, ,Demonstration of a monolithic Npn and Pnp complementary HBT technology,- in Proc. SPIE High Speed Electron. Device Scaling, vol. 1288, 1990, pp. 90-105.
-
(1990)
Proc. SPIE High Speed Electron. Device Scaling
, vol.1288
, pp. 90-105
-
-
Slater, D.B.1
Enquist, P.M.2
Najjar, F.E.3
Chen, M.Y.4
Hutchby, J.A.5
|