Microwave Performances of n-p-n and p-n-p AlGaAs/GaAs Heterojunction Bipolar Transistors

IEEE Transactions on Microwave Theory and Techniques

Volumn 36, Issue 12, 1988, Pages 1869-1873

  Bayraktaroglu, Burhan ^a   Camilleri, Natalino ^a   Lambert, Steve A ^b  

^a TEXAS INSTRUMENTS   (United States)

^b Varo Inc ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; SEMICONDUCTING GALLIUM ARSENIDE--CHEMICAL VAPOR DEPOSITION;

OUTPUT POWER; S PARAMETER DATA;

TRANSISTORS, BIPOLAR;

EID: 0024176189     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.17424     Document Type: Article

References (10)

1. B. Bayraktaroglu, N. Camilleri, H. D. Shih, and H. Q. Tserng, “AlGaAs/GaAs heterojunction bipolar transistors with 4 W/mm power density at X-band,” in IEEE MTT-S Int. Microwave Symp. Dig., 1987, p. 969.
2. B. Bayraktaroglu, N. Camilleri, and H. Q. Tserng, “AlGaAs/GaAs Heterojunction Bipolar Transistors for Power Amplification,” presented at IEEE/Comell Conf. on Adv. Concepts in High Speed Semicond. Dev. and Circuits, Ithaca, NY, 1987.
3. N. H. Sheng et al., “High power GaAlAs/GaAs HBTs for microwave applications,” in IEDM Tech. Dig., 1987, p. 619.
4. K. K. Agarwal, “Dielectric resonator oscillators using GaAs/(Ga,Al)As heterojunction bipolar transistors,” in IEEE MTT-S Tech. Dig., 1986, p. 95.
5. J. L. Lievin, C. D. Chevallier, F. Alexandre, G. Leroux, and D. Ankri, “Ga0.72 Al0 28As/Ga0.99Be0.01As heterojunction bipolar transistor grown by molecular beam epitaxy,” IEEE Electron Device Lett., vol. EDL-7, p. 129, 1986.
6. G. J. Sullivan, P. M. Asbeck, M. F. Chang, D. L. Miller, and K. C. Wang, “AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy,” Electron. Lett., vol. 22, p. 419, 1986.
7. D. A. Sunderland and P. D. Dapkus, “Performance potential of p-n-p heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. EDL-6, p. 648, 1985.
8. J. A. Hutchby, “High performance p-n-p AlGaAs/GaAs heterojunction bipolar transistors: A theoretical analysis,” IEEE Electron Device Lett., vol. EDL-7, p. 108, 1986.
9. D. A. Sunderland and P. D. Dapkus, “Optimizing n-p-n and p-n-p heterojunction bipolar transistors for speed,” IEEE Trans. Electron Devices, vol. ED-34, p. 367, 1987.
10. B. Bayraktaroglu, N. Camilleri, and S. A. Lambert, “Microwave pnp AlGaAs/GaAs heterojunction bipolar transistor,” Electronics Lett., vol. 24, p. 228, 1988.