High-Speed, High-Current-Gain P-n-p InP/InGaAs Heterojunction Bipolar Transistors

IEEE Electron Device Letters

Volumn 14, Issue 1, 1993, Pages 19-21

  Hamm, R A ^a   Chandrasekhar, S ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; INTEGRATED CIRCUITS; MICROWAVE DEVICES; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS;

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH-CURRENT-GAIN BIPOLAR TRANSISTORS; HIGH-SPEED BIPOLAR TRANSISTORS; INDIUM PHOSPHIDE; METAL ORGANIC MBE; P-N-P TRANSISTORS;

BIPOLAR TRANSISTORS;

EID: 0027230627     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215087     Document Type: Article

References (7)

1. R. K. Montgomery et al., “A DC to 20 GHz high gain monolithic InP/InGaAs HBT feedback amplifier,” in IEDM Tech. Dig., 1991, pp. 935–938.
2. S. Chandrasekhar et al., “10 Gb/s OEIC photoreceiver using InP/InGaAs heterojunction bipolar transistors,” Electron. Lett., vol. 28, no. 5, 466–468, 1992.
3. P. R. Gray and R. G. Meyer, Analysis and Design of Analog Integrated Circuits. New York: Wiley, 1984.
4. R. A. Hamm, unpublished results, 1991.
5. J. G. Wasserbauer et al., “Specific contact resistivity of InGaAs/InP p-isotype heterojunctions,” in InP and Related Compounds Conf Proc.
6. S. Chandrasekhar et al., “4 Gb/s pin/HBT monolithic photoreceiver,” Electron. Lett., vol. 26, pp. 1880-1881, 1990.
7. L.M. Lunardi, S. Chandrasekhar, and R.A. Hamm, “High speed InP/InGaAs P-n-p heterojunction bipolar transistors,” presented at the 50th Annual Device Res. Conf., June 22-24, 1992.