GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED Al//1// minus //xIn//xAs GROWN BY MOLECULAR BEAM EPITAXY.

Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

Volumn 2, Issue 2, 1984, Pages 219-223

  Davies, G J ^a   Kerr, T ^a   Tuppen, C G ^a   Wakefield, B ^a   Andrews, D A ^a  

^a MARTLESHAM HEATH   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; ELECTRIC PROPERTIES; SEMICONDUCTING FILMS - GROWTH; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPY, AUGER ELECTRON;

ALUMINUM INDIUM ARSENIDE; INDIUM PHOSPHIDE; MOLECULAR BEAM EPITAXY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0021411621     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582788     Document Type: Article

References (25)