Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP

Journal of Electronic Materials

Volumn 9, Issue 4, 1980, Pages 693-712

  Oliver, James D ^a   Eastman, Lester F ^a  

^a Department of Obstetrics Gynecology   (United States)

Author keywords

GaxIn1 xAs; High Purity; III V Alloy; Liquid Phase Epitaxy Lattice Matched

Indexed keywords

EID: 51249180022     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02652891     Document Type: Article

References (25)

1. In situ in etching technique for l.p.e. InP
2. Purity of GaAs grown by LPE in a graphite boat
3. 3rd International Symposium on GaAs and Related Compounds
4. 7th International Symposium on GaAs and Related Compounds
5. 6th International Symposium on GaAs and Related Compounds
6. Liquid Phase Epitaxial Growth, Electron Mobility and Maximum Drift Velocity of In1-xGaxAs (x\cong0.5) for Microwave Devices