An Advantage of Pnp over Npn AlGaAs/GaAs Heterojunction Bipolar Transistors for Microwave Power Applications

Japanese Journal of Applied Physics

Volumn 31, Issue 4, 1992, Pages L452-L454

  Liu, William ^a   Dai, Changhong ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

Emitter crowding; Hbt; Microwave power

Indexed keywords

ELECTRIC POWER GENERATION - MICROWAVE ENERGY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EMITTER CROWDING; TRANSCONDUCTANCE;

TRANSISTORS, BIPOLAR;

EID: 0026850695     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.L452     Document Type: Article

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